Línies de recerca
Fundamentals of quantum electron transport
New electron devices based on the regime of strong Light-matter interaction. Weak values as new theoretical and experimental tool to characterize novel properties of quantum devices. Modelling displacement currents of electron devices at THz frequencies
Physics-based simulation and modeling of nanoscale devices
Properties of semiconductors in metastable phases. Electron hydrodynamics at the nanoscale. Structures for energy harvesting in the THz range. Coupled Electron-Thermal transport in nanowires and devices based on 2D materials.
RF/microwave circuits, sensors and systems
This research line focuses on the design, and applications of advanced RF/microwave circuits and sensors with the main aim of performance optimization, size reduction, and implementation of cost-effective systems. Applications include circuits, sensors, and smart sensors for motion control, biosensing, industrial applications, smart health, structural health monitoring, etc.
Radiofrequency identification (RFID)
This research line focuses on the design and applications of RFID solutions for Internet of Things and related areas, including HF-RFID and UHF-RFID systems, chipless-RFID systems, and RFID-based sensors
Electrical characterization and reliability of electron devices
We experimentally characterize the electrical properties of electron devices, focusing on failure mechanisms and statistical methodologies for technology qualification.
Memristors and neuromorphic circuits
We experimentally characterize the electrical properties of memristors, perform simulations with ab-initio methods and molecular dynamics and develop compact models with the final goal of circuit simulation. Using stochastic methods, we study the variability of the electrical properties because this is one of the main limitations affecting the practical applications of memristors. Using our compact models, we focus on the hardware implementation of neural networks based on memristive synapses.
Ambient RF energy harvesting
Design and optimization ambient RF energy harvesting systems (from the most common communication bands (GSM-1800, UMTS-2100, ISM-2400/5800), for the supply of autonomous wireless field sensors.
Electronic applications of 2D materials
We are developing technologies for simulation and modeling of devices based on 2DMs towards the future realization of hybrid integrated circuits combining silicon CMOS platform with 2DM platform. Applications encompass the realization of RF circuits exploiting ambipolarity of graphene, photodetection relying on 2DM optical properties, or biosensing using the high sensitivity of atomic thick layers, on top of conventional digital / analog circuits made with silicon CMOS technology.
Smart MEMS sensors integrated in CMOS
Our work is focused on the design of novel fully integrated micro and nanoelectromechanical systems, intended for sensing purposes with the front-end conditioning circuitry using commercial CMOS technologies. Sensor systems based on electrostatic MEMS-NEMS resonators and piezoelectrical AlN/AlScN resonators for ultrasonic applications (PMUTs) are studied. The reduction in size of the electromechanical devices and their CMOS implementation allow to get not only a compact solution but also smart and high sensitivity system. MEMS applications include physical sensors in air/vacuum/liquid operation, RF devices (oscillators, filters, switches, mixers) and arrayed ultrasonic systems for imaging.
Non-linear properties and synchronization in MEMS/NEMS resonators
Our work is focused on exploiting the capabilities that appear from the non-linear mechanical and electrical properties in MEMS and NEMS, from frequency stabilization, harmonics generation, modal interaction and mechanical synchronization.